smd type transistors 1 www.kexin.com.cn sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter 4 collector npn silicon epitaxial transistor BSP19A features high voltage: v (br)ceo of 250 and 350 volts. available in 12 mm tape and reel absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage (open base) v ceo 350 v collector-base voltage (open emitter) v cbo 400 v emitter-base voltage (open collector) v ebo 5v collector current (dc) i c 1000 ma total power dissipation @ ta = 25 * 0.8 watts derate above 25 6.4 mw/ storage temperature range t stg -65to150 junction temperature t j 150 thermal resistance from junction-to-ambient r ja 156 /w maximum temperature for soldering purposes 260 time in solder bath 10 sec * device mounted on a fr-4 glass epoxy printed circuit board using minimum recommended footprint. p d t l electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v (br)ceo i c =1.0ma,i b = 0 350 v collector-base cutoff current i cbo v cb = 400 v, i e = 0 20 na emitter-base cutoff current i ebo v eb =5.0v,i c =0 10 ma dc current gain * h fe i c =20ma,v ce =10v 40 current-gain ? bandwidth product * f t i c =10ma,v ce =10v,f=5.0mhz 70 mhz collector-emitter saturation voltage * v ce(sat) i c =50ma,i b =4.0ma 0.5 v base-emitter saturation voltage * v be(sat) i c =50ma,i b =4.0ma 1.3 v * pulse test: pulse width 300 s, duty cycle = 2.0% marking marking sp19a
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